| PART |
Description |
Maker |
| SI4824DY |
Asymmetrical Dual N-Channel 30-V (D-S) Rated MOSFET
|
Vishay
|
| STL50N25N3LLH5 |
Dual N-channel 30 V, 6 mOhm typ., 14.6 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 asymmetrical double island package
|
ST Microelectronics
|
| CM9320-01DE CM9320 |
Asymmetrical High Efficiency Two Channel Boost LED Driver
|
CALMIRCO[California Micro Devices Corp]
|
| APTGF50DH120T |
Asymmetrical Bridge - IGBT
Asymmetrical - Bridge NPT IGBT Power Module
|
ADPOW[Advanced Power Technology]
|
| APTGF150DH120 |
200 A, 1200 V, N-CHANNEL IGBT
Asymmetrical Bridge - IGBT
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
| APTGT150DH60TG |
Asymmetrical - Bridge Trench Field Stop IGBT Power Module 225 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| OM6215SS OM6214SS OM6216SS OM6217SS |
30 A, 100 V, 0.065 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
TWO POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE
100V Dual N-Channel MOSFET in a S-6 package
400V Dual N-Channel MOSFET in a S-6 package
500V Dual N-Channel MOSFET in a S-6 package
200V Dual N-Channel MOSFET in a S-6 package
|
List of Unclassifed Manufacturers
ETC
International Rectifier
|
| FDS8958B |
30V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ
Dual N & P-Channel PowerTrench垄莽 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m楼? Q2-P-Channel: -30 V, -4.5 A, 51 m楼?
|
Fairchild Semiconductor
|
| APTGT100DH60T3G |
Asymmetrical Bridge
|
Microsemi
|
| APTM20DHM16T3G |
Asymmetrical Bridge
|
Microsemi
|
| APTGT150DH60TG |
Asymmetrical Bridge
|
Microsemi
|
| APTM10DHM05G |
Asymmetrical Bridge
|
Microsemi
|
